A method of measuring electron shading damage which includes the steps of: a) preparing a characteristic curve showing a flat band voltage change relative to an amount of injected charges, the curve being measured by intentionally flowing current through a first capacitor structure made of a lamination of a conductive layer, a nitride film and an oxide film formed on a semiconductor substrate; b) preparing a second capacitor structure made of a lamination of a conductive layer, a nitride film and an oxide film formed on the semiconductor substrate; c) preparing a sample by forming an insulating layer having an opening over the second capacitor structure on the semiconductor substrate, forming a conductive antenna layer connected to the conductive layer through the opening in the insulating layer, and forming an insulating mask pattern on the conductive antenna layer; d) performing a dry process on the sample, the dry process being a subject process for which the electron shading damage is measured; e) measuring a flat band voltage of the second capacitor structure before and after the dry process and calculating a change in the flat band voltage; and f) estimating from the calculated flat band voltage change an amount of charges injected into the second capacitor structure during the dry process, by referring to the characteristic curve. The method of measuring electron shading damage can reduce manufacture costs of a sample and provide a sufficiently high precision.
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