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Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to improve isolation in a transistor array
Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to improve isolation in a transistor array
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机译:使用硼磷正硅酸四乙酯(BPTEOS)改善晶体管阵列中的隔离
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摘要
Controlling the thickness of borophosphorous tetraethyl orthosilicate (BPTEOS) used as all or part of the first inter-layer dielectric (ILD0) in manufacturing a semiconductor device containing an array of transistors to control the field leakage between transistors. Reducing field leakage enables the thickness of field oxide, typically used to reduce field leakage, to be reduced to increase device density in the transistor array.
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