APPARATUS FOR TREATING SURFACE OF RESIST AND FORMATION OF MULTILAYERED RESIST

摘要

PROBLEM TO BE SOLVED: To enhance size controllability and to prevent the undercutting of a lower layer resist. ;SOLUTION: A 1st resist layer 2, a silylated layer 5, a silicon oxide layer 3 and a 2nd resist layer 4 are successively formed on a semiconductor substrate 1. The 2nd resist layer 4 is exposed and developed. The silicon oxide layer 3, the silylated layer 5 and the 1st resist layer 2 are etched using the 2nd resist 4 as a mask to form the objective multilayered resist. The above steps can be carried out without opening to the air.;COPYRIGHT: (C)2000,JPO