CHARACTERIZATION METHOD FOR DRIVING CAPACITY PARAMETER FOR CELL OUTPUT WAVEFORM GENERATION, EXPRESSION METHOD THEREFOR AND CELL OUTPUT WAVEFORM GENERATION METHOD

摘要

PROBLEM TO BE SOLVED: To highly precisely generate a cell output waveform which taking the influence of the cell input waveform of a dull shape and the influence of the resistance component of a load into consideration.;SOLUTION: The driving capacity of all CMOS type cells is expressed by an inverter cell in steps 103 and 104. At this time, the driving capacity is expressed by the inverter cell where the one other than an operated transistor is replaced with a resistor in a one-stage transistor structure cell, and the inverter cell is expressed by an NMOS transistor and a PMOS transistor operated in a final stage in a multi-stage transistor structure cell. The expressed inverter cells are preserved as net lists 106 and 108. Also, as the input waveform of the inverter cell, the cell input waveform is used in the one-stage transistor structure cell and an input waveform calculated for the cell input waveform in a circuit simulation step 110 is used in the multi-stage transistor structure cell. Thus, the characterization method for waveform propagation between cell input and output is provided.;COPYRIGHT: (C)2000,JPO