FERROELECTRIC BASED MEMORY DEVICES UTILIZING LOW CURIE POINT FERROELECTRICS AND ENCAPSULATION

摘要

PURPOSE: A ferroelectric memory cell is provided to operate satisfactorily after being subjected to subsequent processing steps including a forming gas anneal. CONSTITUTION: A ferroelectric memory cell(200) is designed to store the information at a temperature less than a first temperature. The memory cell(200) includes top and bottom contacts that sandwich the dielectric layer(213) which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400 degrees C. The dielectric layer(213) is encapsulated in an oxygen impermeable material such that the encapsulating layer(221) prevents oxygen from entering or leaving the dielectric layer(213). One of the contacts typically includes a platinum electrode. The other contact can include a similar electrode or a semiconductor layer having electrodes spaced apart thereon.