PURPOSE: An ultrasonic thickness measurer using a semiconductor thin film type transducer and a producing method thereof are provided to make easy the attachment of an electrode and the connection of electric wires and to obtain the characteristics of miniaturization, low cost and high sensitivity by removing parasitic impedances on the face contacting with a sound matching layer. CONSTITUTION: A poly-stroll that is a sound matching layer is produced in 8 inches. An electrode is layered on the poly-stroll by a high frequency magnetron sputtering method. The electrode is formed of aluminum, silver and indium. A piezo-electric thin film is layered by the high frequency magnetron sputtering method while an eight inched shadow mask having a hole of 1-3mm of diameter is placed on the poly-stroll. An electrode is secondly layered on the poly-stroll. An indium thin film is layered on the two electrodes to prevent the parasitic impedance due to the use of soldering for connecting electric wires to the electrodes. Thereafter, the electric wires are connected by an automatic wire bonding method. The ultrasonic transducer is cut by a laser to be assembled with an aluminum case. After assembling the ultrasonic transducer with the aluminum case, an empty space is sealed with epoxy resin. Thereby, a semiconductor thin film ultrasonic transducer is produced.
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