A SELECTIVE DIAMOND FORMING METHOD OF FED

摘要

PURPOSE: A method for growing selectively a diamond of a field emission display device is provided to grow selectively a diamond by using a silicon oxide as a sacrificial layer. CONSTITUTION: A thermal oxide layer(33) of a predetermined thickness is formed on an upper portion of a silicon substrate(31). A metal is deposited on an upper portion of the thermal oxide layer(33). A metal line(35) is formed by patterning the metal. The exposed lower oxide layer(33) is etched as much as a predetermined depth by using the metal line(35) as a mask. A carbon thin film is deposited on the whole structure. The carbon thin film grows a diamond(39) under a condition of a BEN(Biads Enhanced Nucleation) process.