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Anisotropic plasma etching of silicon using sulfur hexafluoride etching gas especially to produce recesses of precise lateral dimensions in silicon wafers
Anisotropic plasma etching of silicon using sulfur hexafluoride etching gas especially to produce recesses of precise lateral dimensions in silicon wafers
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机译:使用六氟化硫蚀刻气体对硅进行各向异性等离子体蚀刻,特别是在硅晶片中产生横向尺寸精确的凹槽
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摘要
Anisotropic plasma etching of structures in silicon comprises a polymer deposition phase and an etching phase using an etching gas containing oxygen. In the anisotropic plasma etching of structures in silicon, involving a polymerization step of coating lateral structure boundaries defined by an etch mask with a polymer which is partially removed during subsequent etching and redeposited onto the etched deeper lying parts of the sidewall, etching is carried out with an etching gas containing 3-40 vol. % oxygen.
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