Method of prevention of degradation of low dielectric constant gap- fill material

摘要

Patterned metal layers are gap filled with HSQ and passivated to stabilize the dielectric constant of the HSQ substantially at the as- deposited value prior to oxide deposition by PECVD and planarization. Passivation and stabilization are effected by treating the as--deposited HSQ layer in a silane (SiH.sub.4) containing plasma.