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Micro contact pin structure with a piezoelectric element and probe card using the same

机译:具有压电元件的微接触针结构和使用该微接触针结构的探针卡

摘要

A micro contact structure and a probe card to be used in testing performance of a semiconductor integrated circuit device formed on a semiconductor wafer have improved contact characteristics. The contact structure includes a micro contact pin having electric conductivity formed on one end of a beam which is movable in a vertical direction, and a piezoelectric element formed on the beam to drive the beam in the vertical direction. The beam is made of silicon on the surface of which is formed of a conductive thin film, and the micro contact pin has a pyramid shape. The piezoelectric element is a bimorph plate mounted on an upper surface of the beam or both upper and lower surfaces of the beam.
机译:用于测试形成在半导体晶片上的半导体集成电路器件的性能的微接触结构和探针卡具有改善的接触特性。接触结构包括:微接触销,其具有形成在沿垂直方向可移动的梁的一端上的导电性;以及压电元件,其形成在梁上以在垂直方向上驱动梁。梁由硅制成,其表面由导电薄膜形成,并且微接触针具有金字塔形状。压电元件是安装在梁的上表面或梁的上表面和下表面两者上的双压电晶片板。

著录项

  • 公开/公告号US6072190A

    专利类型

  • 公开/公告日2000-06-06

    原文格式PDF

  • 申请/专利权人 ADVANTEST CORP.;

    申请/专利号US19960751851

  • 发明设计人 MINAKO YOSHIDA;TAKASHI WATANABE;

    申请日1996-11-18

  • 分类号H01L23/58;H01L29/82;H01L23/48;H01L23/52;

  • 国家 US

  • 入库时间 2022-08-22 01:37:03

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