MODELING METHOD OF PATTERN, FILM THICKNESS MEASURING METHOD, PROCESS STATE JUDGING METHOD, THICKNESS MEASURING EQUIPMENT, PROCESS STATE JUDGING EQUIPMENT, GRINDING EQUIPMENT AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for facilitating the calculation of a theoretical value in the case that the film thickness of an object is measured on the basis of a degree of the accordance of the theoretical value and the actual value of an optical characteristic. ;SOLUTION: An actual pattern shown in (a) is a multi-layer structure and a complicated shape. Since a TiN film 23 hardly transmits light, the structure of the rear side can be neglected, they have infinite thickness, and can be calculated even if it is supposed that these materials are entirely filled on the rear side. When such a view is taken, the pattern shown in (a) can be modeled into the pattern shown in (b). Thus, if calculation is performed after such modeling, a calculation time can be remarkably shortened.;COPYRIGHT: (C)2001,JPO