The magnetic thin film memory device, is recorded to magnetic thin film memory and the magnetic thin film memory which use that the manner

摘要

PURPOSE: To enable high-sensitivity reading out and increasing of the density by converting a Hall voltage to a reading out signal by using the magnetic thin-film memory elements having the axis of easy magnetization existing between a vertical direction and an intra-surface direction. ;CONSTITUTION: An alloy of a specific rare earth element and transition metal in which axis of easy magnetization exists between the vertical direction and the intra-surface direction, the relation between the field and coercive force in the same direction satisfies prescribed conditions and the good Hall voltage is obtainable is used as a thin-film magnetic material. Current lines 4 and voltage lines 5 for reading out intersecting orthogonally with each other are connected to the thin-film memory elements 311 to 333. A current J is energized in the current lines 4 of the thin-film memory elements magnetized in a specified direction and the voltage change Vhj of the voltage lines 5 is taken out. As a result, the high-sensitivity reading out is executed by utilizing the Hall voltage as the reading out signal and the increase of the density is enabled.;COPYRIGHT: (C)1993,JPO&Japio