COMPOSITION FOR FORMING PLZT FERROELECTRIC THIN FILM AND FORMATION OF THE THIN FILM

摘要

PROBLEM TO BE SOLVED: To obtain a striation-free, high-quality PLZT ferroelectric thin film. ;SOLUTION: The subject perovskite-type PLZT ferroelectric thin film-forming composition comprising respective alkoxides, partial hydrolyzates and/or organic acid salts of Pb, La, Zr and Ti is such as to be ≤0.8 wt.% in moisture content. A method for forming a PLZT ferroelectric thin film comprises the following procedure: a heat-resistant substrate is coated with the above composition followed by heating in air, an oxidative atmosphere or hydrous vapor atmosphere, this practice is repeated until a film of desired thickness is afforded, and during or after heating at least in the final step, the film is baked at the crystallization temperature or higher.;COPYRIGHT: (C)2001,JPO