FERROELECTRIC FET WITH POLYCRYSTALLINE CRYSTALLOGRAPHICALLY ORIENTED FERROELECTRIC MATERIAL

摘要

A nondestructive read-out, nonvolatile ferroelectric field effect transistor ('FET') memory (10, 810, 960) in an integrated circuit, containing a thin film of polycrystalline crystallographically oriented ferroelectric material (26, 842, 992). Preferably, the material is polycrystalline c-axis oriented layered superlattice material. More preferably, it is c-axis oriented strontium bismuth tantalate or strontium bismuth tantalum niobate.