Method for Removing Defects of Single Crystal Material and Single Crystal Material from Which Defects are Removed by the Method

摘要

The present invention relates to a method of manufacturing a single crystal ingot 11 in which the single crystal 11 is heated at a temperature of not less than 0.85 times the melting point of the monocrystalline body 11 at a pressure of 0.2 to 304 MPa under a stable atmosphere of the monocrystal body 11 for 5 minutes to 20 Annealing is performed after performing the hot isostatic pressing under the time. The stable atmosphere of the monocrystal body 11 is preferably an atmosphere containing an inert gas atmosphere or a vapor of a high vapor pressure element, more preferably 10 to 200 MPa. The single crystal 11 may be an ingot of a silicon single crystal, a GaAs single crystal, an InP single crystal, a ZnS single crystal or a ZnSe single crystal, or a block or a wafer obtained by cutting the ingot.;This eliminates or disperses the lattice defects such as pore-growing defects existing in the surface of the monocrystalline body 11 as well as inside the monocrystalline body 11 irrespective of the size of the monocrystalline body 11.