首页> 外国专利> SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING COMPONENT CIRCUITS FREE FROM THROUGH-CURRENT IN TRANSITION PERIOD BETWEEN ACTIVE MODE AND SLEEP MODE

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING COMPONENT CIRCUITS FREE FROM THROUGH-CURRENT IN TRANSITION PERIOD BETWEEN ACTIVE MODE AND SLEEP MODE

机译:具有有源模式和睡眠模式的过渡期间无贯穿电流的组件电路的半导体集成电路设备

摘要

The semiconductor integrated circuit device includes a high speed bus driver 21 and a bus receiver 22 all connected to a bus line BUS2, and the high speed bus driver includes a positive power supply voltage line VDD and a virtual ground line ( VGND) and the sleep mode to cut off the virtual ground line from the power line (GND) to reduce power consumption, and to enter the high speed to disconnect the bus line from the high speed bus driver in the transition period and sleep mode. The switching circuit 23 is connected between the bus driver 21 and the bus line BUS2 to block the through-current conduction path caused by the leakage current of the high speed component field effect transistor of the bus driver.
机译:半导体集成电路装置包括均连接到总线BUS2的高速总线驱动器21和总线接收器22,并且高速总线驱动器包括正电源电压线VDD和虚拟地线(VGND)以及休眠状态。在过渡阶段和睡眠模式下,该模式将切断虚拟地线与电源线(GND)的连接以降低功耗,并进入高速模式以断开总线与高速总线驱动器的连接。开关电路23连接在总线驱动器21和总线BUS2之间,以阻断由总线驱动器的高速分量场效应晶体管的泄漏电流引起的直通电流传导路径。

著录项

  • 公开/公告号KR100307563B1

    专利类型

  • 公开/公告日2001-11-01

    原文格式PDF

  • 申请/专利权人 NULL NULL;

    申请/专利号KR19990021804

  • 发明设计人 오가와다다히꼬;

    申请日1999-06-11

  • 分类号H03K17/00;

  • 国家 KR

  • 入库时间 2022-08-22 01:12:03

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