METHOD FOR FORMING BUBBLE-LIKE SHALLOW TRENCH SEPARATION, USING MICROMACHINING TECHNOLOGY TO REMOVE HEAVILY-DOPED SILICON

摘要

PROBLEM TO BE SOLVED: To provide a method for forming bubble-like shallow trench isolation such that an effective region is preserved for improved isolation, in to a semiconductor device.;SOLUTION: In order to form a bubble-like shallow trench isolation(STI), barrier layers (14 and 18) and first formed on a substrate (10). An opening (22) of isolation is formed in the barrier layer. Then, ions (25) are implanted in the substrate through the opening of isolation, to form a doped region (26). The doped region is selectively etched to form a hole (30). The hole is filled with an insulating material, to form a region (40) of bubble-like shallow trench separation(STI). The substrate comprises an effective region between regions of bubble-like shallow trench isolation(STI).;COPYRIGHT: (C)2002,JPO