METHOD FOR PRODUCING COMPOSITION FOR FILM FORMATION, COMPOSITION FOR FILM FORMATION, METHOD FOR FORMING FILM, AND SILICA-BASED FILM

摘要

PROBLEM TO BE SOLVED: To obtain a composition for film formation capable of forming a silica-based film exhibiting a very small dielectric constant as a material for an interlayer insulating film in a semiconductor element, and the like, and having few foreign matter in a solution.;SOLUTION: Disclosed is a method for producing a composition for film formation and comprises the production of (A) a condensation product by hydrolyzing one kind or more compounds represented by general formulas 1 to 3 in the presence of an alkylamine or an onium salt to be condensed and (B) filtration of a solution containing an organic solvent through an ultrafiltration membrane. Ra(Si)(OR1)4-a...(1) Si(OR2)4...(2) R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c...(3) [R is H, F or a monovalent organic group; R1 to R6 is each a monovalent organic group; R7 is O, phenylene group or (CH2)n; (a) is an integer from 1 to 2; (b) and (c) are each an integer from 0 to 2; (d) is 0 or 1; (n) is an integer from 1 to 6].;COPYRIGHT: (C)2002,JPO