HEAT TREATMENT DEVICE, METHOD FOR CONTROLLING HEAT TREATMENT DEVICE, AND METHOD FOR DETERMINING PLACE TO BE MEASURED IN CIRCUMFERENCE OF SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To carry out heat treatment a semiconductor wafer by considering temperature distribution on the semiconductor wafer.;SOLUTION: In this heat treatment device, a substrate is arranged in a treatment chamber for heat treatment. The heat treatment device is equipped with a heating part, a temperature measurement part that measures temperature at a center measurement place that is positioned near the center of the substrate, and a plurality of circumference measurement places that are positioned near the circumference of the substrate, a typical temperature calculation part that calculates the typical temperature of the substrate, based on temperature at the center measurement place and the plurality of circumference measurement places, and a control part that controls the heating part, based on the typical temperature.;COPYRIGHT: (C)2001,JPO