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Photoresist developing nozzle, photoresist developing apparatus, and photoresist developing method

机译:光刻胶显影喷嘴,光刻胶显影装置和光刻胶显影方法

摘要

A photoresist developing nozzle, a photoresist developing apparatus and a photoresist developing method capable of effecting uniform development are provided even in the case of a large diameter wafer. A photoresist nozzle is characterized in comprising a nozzle body (8) having a plurality of small chambers (8A to 8E), developer supply flow passages (14A to 14E) for supplying developer to respective small chambers (8A to 8E), developer discharge sections (10) for discharging developer supplied from the developer supply flow passages (14A to 14E) onto the wafer W. The photoresist developing apparatus has the photoresist developing nozzle and the photoresist developing method uses the photoresist developing nozzle.
机译:即使在大直径晶片的情况下,也提供了能够实现均匀显影的光刻胶显影喷嘴,光刻胶显影设备和光刻胶显影方法。光致抗蚀剂喷嘴的特征在于包括具有多个小腔室( 8 A至 8 E)的喷嘴主体( 8 ),显影剂供应用于将显影剂供应到各个小腔室( 8 A至 8 E)的流道( 14 A至 14 E) ),显影剂排出部( 10 ),用于将从显影剂供给流路( 14 A至 14 E)供给的显影剂排出到晶片W上。光刻胶显影设备具有光刻胶显影喷嘴,并且光刻胶显影方法使用光刻胶显影喷嘴。

著录项

  • 公开/公告号US2002043541A1

    专利类型

  • 公开/公告日2002-04-18

    原文格式PDF

  • 申请/专利权人 YABE SACHIKO;

    申请/专利号US20010816366

  • 发明设计人 SACHIKO YABE;

    申请日2001-03-26

  • 分类号G03F7/30;B67B7/00;G01F11/00;

  • 国家 US

  • 入库时间 2022-08-22 00:52:41

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