首页> 外国专利> Electronic circuit device and hybrid integrated circuit with an asic and an FPGA

Electronic circuit device and hybrid integrated circuit with an asic and an FPGA

机译:具有asic和FPGA的电子电路设备和混合集成电路

摘要

An improved hybrid integrated circuit is provided in order that the specification can quickly be modified and adjusted when required without need for preparing a new mask and without need for compromising the performance of the hybrid integrated circuit. The hybrid integrated circuit comprises: a common substrate on which an electrode pattern is formed; a first monolithic semiconductor chip designed by the use of an ASIC technology and mounted on the common substrate; a second monolithic semiconductor chip designed by the use of an FPGA technology and mounted on the common substrate; and external terminals provided for the common substrate; and an insulating material encapsulating the first monolithic semiconductor chip and the second monolithic semiconductor chip, wherein the second monolithic semiconductor chip is provided with a storage element which is rewritable by means of a control signal given through the external terminal in order to store circuit configuration data with which internal connections of the second monolithic semiconductor chip are modified to form a hardware configuration within the second monolithic semiconductor chip corresponding to a predetermined operational specification, and wherein the first monolithic semiconductor chip and the second monolithic semiconductor chip cooperate with each other by exchanging signals through the electrode pattern of the common substrate in order to implement the predetermined operational specification.
机译:提供了一种改进的混合集成电路,以便在需要时可以快速修改和调整规格,而无需准备新的掩模,也不需要损害混合集成电路的性能。该混合集成电路包括:共用基板,在该共用基板上形成有电极图案。第一单片半导体芯片,其通过使用ASIC技术设计并安装在公共基板上;通过FPGA技术设计并安装在公共基板上的第二单片半导体芯片;共用基板设置有外部端子。以及密封第一单片半导体芯片和第二单片半导体芯片的绝缘材料,其中第二单片半导体芯片设置有存储元件,该存储元件可以借助于通过外部端子给出的控制信号而被重写以存储电路配置数据通过改变第二单片半导体芯片的内部连接以在第二单片半导体芯片内形成与预定操作规范相对应的硬件配置,并且其中第一单片半导体芯片和第二单片半导体芯片通过交换信号彼此协作为了实现预定的操作规范,通过公共基板的电极图案来形成电极。

著录项

  • 公开/公告号US2002066956A1

    专利类型

  • 公开/公告日2002-06-06

    原文格式PDF

  • 申请/专利权人 KABUSHIKI KAISHA TOSHIBA;

    申请/专利号US20010997005

  • 发明设计人 HIDEKI TAGUCHI;

    申请日2001-11-30

  • 分类号H01L23/48;

  • 国家 US

  • 入库时间 2022-08-22 00:50:57

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号