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Methods for designing standard cell transistor structures

机译:设计标准单元晶体管结构的方法

摘要

Disclosed are methods for designing standard cell transistor layouts for minimizing transistor delays and for minimizing power consumption. The method of minimizing transistor delays includes defining a transistor model for a P-type transistor and an N-type transistor of a CMOS standard cell. The method then includes minimizing a ratio between the P-type transistor and the N-type transistor. The ratio is defined by dividing a P-type gate width of the P-type transistor by an N-type gate width of the N-type transistor. The optimizing is performed by substantially minimizing an average delay for the transistor structure. In this embodiment, the CMOS standard cell will define a transistor structure that is implemented to make a logic circuit. The CMOS standard cell is one of a library of standard cells, where each standard cell defines a particular logic circuit.
机译:公开了用于设计标准单元晶体管布局以最小化晶体管延迟和最小化功耗的方法。最小化晶体管延迟的方法包括定义用于CMOS标准单元的P型晶体管和N型晶体管的晶体管模型。该方法然后包括最小化P型晶体管和N型晶体管之间的比率。通过将P型晶体管的P型栅极宽度除以N型晶体管的N型栅极宽度来定义该比率。通过基本最小化晶体管结构的平均延迟来执行优化。在该实施例中,CMOS标准单元将定义被实现为制造逻辑电路的晶体管结构。 CMOS标准单元是标准单元库之一,其中每个标准单元定义一个特定的逻辑电路。

著录项

  • 公开/公告号US6477695B1

    专利类型

  • 公开/公告日2002-11-05

    原文格式PDF

  • 申请/专利权人 ARTISAN COMPONENTS INC.;

    申请/专利号US19990337999

  • 发明设计人 DHRUMIL GANDHI;

    申请日1999-06-22

  • 分类号G06F175/00;H03K190/00;

  • 国家 US

  • 入库时间 2022-08-22 00:46:42

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