Patterned phase shift layers for wavelength-selectable vertical-cavity surface-emitting laser (vcsel) arrays

摘要

A method is provided, the method comprising forming a first of n masking layers (1165) for a device (900) and forming a first of nphase-shift layers (970) for the device (900) using the first of the n masking layers (1165). The method also comprises forming a second of n masking layers (1165) for a device (900), and forming a second of n phase-shift layers (1070) for the device (900) using the second of the n masking layers (1165) and forming at least n + 1 and at most 2" different optical thicknesses for the device (900) using the n masking layers (1165) and the n phase-shift layers (1170).