The sensor has a mono-crystalline material structure (1), such as quartz, used to support at least a stain gauge (2) formed by a semiconductor material, such as silicon, from a chosen liberally doped type. The strain gauge (2) is an element formed on a determined crystallo-graphic plane so as to favour its co-efficient of piezo-resistivity. The structure (1) is an engraved element upon a determined crystallo-graphic plane favoured for its engraving. The strain gauge (2) is fixed to the structure (1) by adhesive so that the sensor is produced. A dielectric layer supported by the structure (1) and/or the strain gauge (2) separates the strain gauge (2) from the structure (1) forming the support. Both the structure (1) and the strain gauge (2) may be formed from silicon.
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