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GRAPHITE CRUCIBLE FOR GROWTH OF SINGLE CRYSTALLINE SILICON BY CZOCHRALSKI METHOD

机译:克拉克斯基法研究单晶硅生长的石墨坩埚

摘要

The invention Czochralski relates to (Czochralski) method graphite crucible for the silicon single crystal growth by the graphite crucible (SiO 2) and SiO x to gas and does not react with materials, the quartz crucible, such as boron nitride (BN) by the radius of curvature it is applied to the gap portions between the divided graphite crucible adjacent to the changing area to prevent erosion extending the life of the graphite crucible, and to stabilize the process, improves the product yield sikineunde has its effect.
机译:Czochralski发明涉及一种(Czochralski)方法的石墨坩埚,用于通过将石墨坩埚(SiO 2)和SiO x 转化为气体而不与材料反应来生长硅单晶。石英坩埚,例如氮化硼(BN),通过曲率半径将其施加到与变化区域相邻的分割石墨坩埚之间的间隙部分,以防止腐蚀延长石墨坩埚的寿命,并使过程稳定,提高产品产量sikineunde有其作用。

著录项

  • 公开/公告号KR100324481B1

    专利类型

  • 公开/公告日2002-02-27

    原文格式PDF

  • 申请/专利权人 NULL NULL;

    申请/专利号KR19990026935

  • 发明设计人 최일수;전현국;안춘호;이경석;

    申请日1999-07-05

  • 分类号C30B15/10;

  • 国家 KR

  • 入库时间 2022-08-22 00:29:55

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