首页> 外国专利> AN INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE HAVING BUILT-IN SELF-REPAIR CIRCUIT FOR EMBEDDED MEMORY AND A METHOD FOR REPAIRING THE MEMORY

AN INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE HAVING BUILT-IN SELF-REPAIR CIRCUIT FOR EMBEDDED MEMORY AND A METHOD FOR REPAIRING THE MEMORY

机译:具有内置嵌入式存储器的自修复电路的集成电路半导体器件和修复存储器的方法

摘要

An integrated circuit semiconductor device having a self-healing circuit for an embedded memory disclosed herein includes row and column fill entries for storing information required to perform a row and column recovery of bad cells generated in the embedded memory. do. The row and column fill entries are sized according to the number of row / column redundancy of the internal memory. The row and column fill entries respectively store row and column address information corresponding to the location where the bad cell is generated, and indicate the other's fill entry. Built-in pointer The self-recovery circuit may leave only the information to be recovered in the fill entries and delete the remaining information in order to perform the repair of the defective cell, and then the row for the bad cell generated in the internal memory by the last remaining fill entry information. Perform column recovery.
机译:本文公开的具有用于嵌入式存储器的自愈电路的集成电路半导体器件包括行和列填充条目,用于存储执行在嵌入式存储器中生成的坏单元的行和列恢复所需的信息。做。行和列填充条目的大小根据内部存储器的行/列冗余数而定。行和列填充条目分别存储与坏单元生成位置相对应的行和列地址信息,并指示对方的填充条目。内置指针自恢复电路可以只将要恢复的信息保留在填充条目中,然后删除剩余信息,以便对有缺陷的单元进行修复,然后在内部存储器中生成坏单元的行按最后剩余的填充条目信息。执行列恢复。

著录项

  • 公开/公告号KR100354437B1

    专利类型

  • 公开/公告日2002-09-28

    原文格式PDF

  • 申请/专利权人 삼성전자 주식회사;

    申请/专利号KR20000004376

  • 发明设计人 박진영;김헌철;

    申请日2000-01-28

  • 分类号G11C29/00;

  • 国家 KR

  • 入库时间 2022-08-22 00:29:21

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