Storage capacitor used in integrated circuits has a thick insulating layer formed on the dielectric intermediate layer on an upper section of the trench wall in the lower region of the trench

摘要

Storage capacitor has a thick insulating layer formed on the dielectric intermediate layer on an upper section of the trench wall in the lower region of the trench. Storage capacitor comprises a trench (101) formed in a semiconductor substrate (100) having a wide lower region (112) and a narrower upper region (111); an outer electrode layer (103) formed around a lower section of the lower region of the trench; a dielectric intermediate layer (104) formed on the lower section of the trench wall in the lower region of the trench; an inner electrode layer (102); and a first thick insulating layer (105) formed on the dielectric intermediate layer on an upper section of the trench wall in the lower region of the trench. An Independent claim is also included for a process for the production of the capacitor. Preferred Features: A second insulating layer (106) is formed on the first thick insulating layer bordering the trench wall in the upper region so that the two insulating layers form a continuous surface. Both insulating layers are made of an oxide and a nitride.