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Connecting structure used in a testing arrangement for forming an electrical connection in semiconductor devices comprises a connecting substrate with through-holes, and connecting elements mounted on the horizontal surface of the substrate
Connecting structure used in a testing arrangement for forming an electrical connection in semiconductor devices comprises a connecting substrate with through-holes, and connecting elements mounted on the horizontal surface of the substrate
Connecting structure comprises a connecting substrate with through-holes; and a number of connecting elements made of conducting material and mounted on the horizontal surface of the substrate. An independent claim is also included for a process for the production of the connecting structure comprising forming an additive layer on a surface of a silicon substrate, forming a photo lacquer on the additive layer, directing a photo mask on the photo lacquer and irradiating with UV light through the mask, developing patterns on one surface of the photo lacquer layer, producing connecting elements made from conducting elements in the patterns, removing the photo lacquer layer, removing the additive layer by etching, and mounting the connecting elements on the substrate. Preferred Features: The connecting substrate can be made from silicon or a dielectric material, such as polyimide, ceramic or glass.
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