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Semiconductor device e.g. metal oxide semiconductor transistor, has gate electrode with polysilicon layer having reverse tapering portion to enlarge distance between gate electrode and contact plug
Semiconductor device e.g. metal oxide semiconductor transistor, has gate electrode with polysilicon layer having reverse tapering portion to enlarge distance between gate electrode and contact plug
A polysilicon layer (6a) of a gate electrode (6), has a reverse tapering portion, so as to enlarge the distance between a contact plug (10) and the gate electrode. An Independent claim is included for semiconductor device manufacture method.
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