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Method for producing Czochralski silicon free of cohesive self-interstitials
Method for producing Czochralski silicon free of cohesive self-interstitials
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机译:不含内聚自填隙子的直拉硅的生产方法
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摘要
A process for heat treating a silicon wafer to dissolve B-type agglomerated interstitial defects present therein. The process includes heating the silicon wafer at a temperature for a time sufficient to dissolve B-defects, the wafer being heated to said temperature at a rate sufficient to prevent B-defects from becoming stabilized such that these defects are rendered incapable of being dissolved.
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