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Thin film electret electrostatic microphone and its production manner

机译:薄膜驻极体静电麦克风及其生产方式

摘要

PROBLEM TO BE SOLVED: To attain further performance improvement without generating individual difference in performance caused by dispersions in the thickness of an electret layer or the like. ;SOLUTION: This back electret type thin film electret capacitor microphone has thin film forming processes A-D for directly forming a thin film 120 on the surface of a back plate 4 from fine particles of high-molecular FEP and a polarizing process E or F for performing polarizing processing to the thin film 120. The thin film forming process has a process A for applying an organic solvent 100 for dispersing fine particles of high-molecular FEP onto the back plate 4 through a spin-on-coat method, a process B for removing only organic solvent 110 by heating the back plate 4 to which the organic solvent 100 is applied, and a process D for forming thin film of high-molecular FEP by heating the back plate 4, from which only the organic solvent 100 is removed, at a much higher temperature. The polarizing process is performed by cooling the back plate 4 with a solution 200 such as water after the thin film forming process.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:在不产生因驻极体层的厚度等的分散而引起的性能个体差异的情况下,实现进一步的性能改善。 ;解决方案:此后驻极体型薄膜驻极体电容式麦克风具有薄膜形成工艺AD,用于从高分子FEP的细颗粒直接在背板4的表面上形成薄膜120,并且执行极化处理E或F薄膜形成过程具有用于通过旋涂法将用于将高分子FEP的细颗粒分散在背板4上的有机溶剂100施加到步骤A的过程A,用于形成薄膜120的偏振处理。通过加热施加有有机溶剂100的背板4仅除去有机溶剂110,以及通过加热仅除去有机溶剂100的背板4来形成高分子FEP薄膜的工艺D,在更高的温度下。偏振处理通过在薄膜形成处理之后用诸如水的溶液200冷却后板4来进行。版权所有:(C)1999,JPO

著录项

  • 公开/公告号JP3356668B2

    专利类型

  • 公开/公告日2002-12-16

    原文格式PDF

  • 申请/专利权人 ホシデン株式会社;

    申请/专利号JP19970331245

  • 发明设计人 安田 護;大林 義昭;

    申请日1997-11-14

  • 分类号H04R19/01;H04R31/00;

  • 国家 JP

  • 入库时间 2022-08-22 00:19:16

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