BORON PHOSPHIDE BASED SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a vapor phase growth method for obtaining a boron phosphide based semiconductor layer having superior continuity on a crystalline substrate having a large degree of lattice mismatching.;SOLUTION: In a method of manufacturing the boron phosphide based semiconductor layer wherein a boron phosphide based semiconductor layer containing boron (B) and phosphorus (P) as constituent elements is formed by vapor growth on the surface of the crystalline substrate, particles containing either boron or phosphorous are formed in advance on the surface the crystalline substrate, and then the boron phosphide based semiconductor layer is formed by vapor phase growth.;COPYRIGHT: (C)2004,JPO