首页> 外国专利> PROCESS FOR PREPARING TIN - SILVER ALLOY-PLATED FILM, TIN - SILVER ALLOY-PLATED FILM PREPARED THROUGH THIS PROCESS AND LEAD FRAME FOR ELECTRONIC MEMBER HAVING THIS FILM

PROCESS FOR PREPARING TIN - SILVER ALLOY-PLATED FILM, TIN - SILVER ALLOY-PLATED FILM PREPARED THROUGH THIS PROCESS AND LEAD FRAME FOR ELECTRONIC MEMBER HAVING THIS FILM

机译:通过该过程制备锡-银合金镀膜的过程,锡-银合金镀膜的制备以及具有该膜的电子部件的铅框架

摘要

PROBLEM TO BE SOLVED: To prepare a tin - silver alloy-plated film which does not contain lead as one of environmentally harmful substances, allows little discoloration after heating and exerts an excellent solder wettability and bending crack property.;SOLUTION: For example, the tin - silver alloy-plated film is formed on an outer lead part 3 of a lead frame through electroplating using a pulse pattern wherein the duration of the charging period is from 3 to 500 ms, the duration of the rest period is from 1 to 500 ms and the rest period is shorter than the charging period. The plated film has a reflection density of ≥1.0 and contains silver and tin. Here, tin has crystal orientation indices at planes (220), (211), (200) and (101) of from 0.7 to 5.4, from 0.8 to 3.0, ≤0.2 and ≤1.4, respectively.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:要制备锡-银合金镀膜,该镀膜不包含铅作为对环境有害的物质,加热后几乎不变色,并具有出色的焊料润湿性和弯曲裂纹性。通过使用脉冲图案通过电镀在引线框的外部引线部分3上形成镀锡-银合金的薄膜,其中充电时间段的持续时间为3到500 ms,其余时间段的持续时间为1到500 ms ms,其余时间比充电时间短。该镀膜的反射密度为1.0埃,并且包含银和锡。在此,锡在平面(220),(211),(200)和(101)上的晶体取向指数分别为0.7至5.4、0.8至3.0、0.2和1.4,COPYRIGHT:(C )2003年,日本特许厅

著录项

  • 公开/公告号JP2003129284A

    专利类型

  • 公开/公告日2003-05-08

    原文格式PDF

  • 申请/专利权人 MATSUSHITA ELECTRIC IND CO LTD;

    申请/专利号JP20010326292

  • 发明设计人 MASUDA MATSUO;TANAKA HISAHIRO;

    申请日2001-10-24

  • 分类号C25D7/12;C25D5/18;H01L23/50;

  • 国家 JP

  • 入库时间 2022-08-22 00:13:23

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