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METHOD OF TREATING WAFER, SYSTEM OF TREATING WAFER, METHOD OF MANUFACTURING EPITAXIAL WAFER AND SYSTEM OF MANUFACTURING EPITAXIAL WAFER
METHOD OF TREATING WAFER, SYSTEM OF TREATING WAFER, METHOD OF MANUFACTURING EPITAXIAL WAFER AND SYSTEM OF MANUFACTURING EPITAXIAL WAFER
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机译:处理晶片的方法,处理晶片的系统,制造表位晶片的方法和制造表位晶片的系统
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摘要
PROBLEM TO BE SOLVED: To provide a method of treating wafers which can recognize the effect in the case where the number of sheets of the wafers put in a load lock chamber and the number of sheets of the wafers subjected to prescribed treatment do not match with each other, and to provide a system of treating the wafers.;SOLUTION: In a method of treating wafers, a plurality of sheets of the wafers (such as single crystal substrate S) are housed in each of cassettes 30 arranged within load lock chambers 6 and 7 of a wafer treatment device (such as an epitaxial wafer manufacturing device), and the wafers within the chambers 6 and 7 are carried in order into a treating chamber (such as a reaction chamber 1) to perform a prescribed treatment on the wafers in a single-wafer type. By this method, the number of the put-in sheets of the wafers put in the cassettes 30 arranged within the chambers 6 and 7 by a transfer unit 20 is calculated, while the number of times of the treatments performed on the wafers is calculated and both calculated results of the number of times of the treatments and the number of the put-in sheets coincide with each other or not is decided.;COPYRIGHT: (C)2003,JPO
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