首页> 外国专利> Magnetoresistive-effect element having electrode layers oppositely disposed on main surfaces of a magnetoresistive-effect thin film having hard magnetic bias layers with a particular resistivity

Magnetoresistive-effect element having electrode layers oppositely disposed on main surfaces of a magnetoresistive-effect thin film having hard magnetic bias layers with a particular resistivity

机译:磁阻效应元件,其电极层相对地设置在具有具有特定电阻率的硬磁偏置层的磁阻效应薄膜的主表面上

摘要

A first ferromagnetic layer is made to show a single magnetic domain to prevent any magnetic walls from appearing. A pair of bias layers 4 are made of a hard magnetic material showing a high resistivity are arranged at opposite ends of a TMR thin film 3. As a result, the sense current flowing through the TMR thin film 3 is prevented from diverting to the bias layers 4. Thus, a sufficiently strong bias magnetic field can be applied to the TMR thin film 3. As a result, the free layer 13 of the TMR thin film 3 is made to show a single magnetic domain to prevent any magnetic walls from appearing.
机译:制成第一铁磁层以显示单个磁畴,以防止出现任何磁壁。在TMR薄膜 3 的相对两端布置有由高电阻率的硬磁材料制成的一对偏置层 4 。结果,防止了流过TMR薄膜 3 的感测电流转向偏置层 4 。因此,可以对TMR薄膜 3 施加足够强的偏置磁场。结果,使TMR薄膜 3 的自由层 13 显示单个磁畴,以防止出现任何磁性壁。

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