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CRITICAL CURRENT DENSITY IMPROVEMENT IN HIGH-TEMPERATURE SUPERCONDUCTORS

机译:高温超导体的临界电流密度提高

摘要

The composite structure characterized in that it presents a superconducting-current density higher than 1010 A/m2, said composite structure comprising: a first layer of magnetic material with uniaxial anisotropy a second barrier-sheet or insulating layer and a third layer of high-temperature superconducting material these layers being arranged, in the described order, on a base substrate. The process for the preparation of a composite structure that presents a superconducting-current density higher than 1010 A/m2, comprises: a) the epitaxial growth of a first layer of magnetic material, a second barrier sheet layer, and a third layer of superconducting material, on a base substrate b) the heating of the base substrate to a temperature ranging from 650 DEG C to 900 DEG C before carrying out the growth of each one of the three layers of step a) and c) the application of an oxygen partial pressure during the growth of each layer.
机译:该复合结构的特征在于,其呈现的超导电流密度高于10 10 A / m 2,所述复合结构包括:具有单轴各向异性的磁性材料的第一层,第二阻挡层或绝缘层和第三层高温超导材料这些层按所述顺序排列在基础基板上。具有高于10 10 A / m 2的超导电流密度的复合结构的制备方法包括:a)外延生长磁性材料的第一层,第二阻挡片层, b)在进行步骤a)和c的三层中的每一层的生长之前,将基础衬底加热到​​650℃至900℃的温度;以及在基础衬底上的第三层超导材料。 )在各层的生长过程中施加氧气分压。

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