Integrated storage and sensor element comprises a first layer arrangement sensitive to the giant magnetoresistance effect in a measuring region opposite an external magnetic field and a second layer arrangement on a substrate

摘要

Integrated storage and sensor element comprises a first layer arrangement (16) sensitive to the giant magnetoresistance effect in a measuring region opposite an external magnetic field and a second layer arrangement (18) which is non-sensitive to an external magnetic field arranged on a substrate (10). The layer arrangements have two coupled ferromagnetic layers (12, 14) lying opposite each other and separated by an intermediate layer (13). Preferably a magnetic screen or screen layer (19) is arranged on the second layer arrangement so that it screens the second layer arrangement within the measuring region from the influence of the external magnetic field. A buffer layer (11) is arranged between the substrate and the first and/or second layer arrangement. The buffer layer is a permalloy layer or a high ohmic permalloy layer, especially of formula (I). Ni79Fe16.7Mo4Mn3 (I)