Pattern design method for semiconductor processing, involves using line patterns having width smaller than minimum resolution line width, for connecting multiple hole patterns on mask

摘要

The exposure wavelength of a light source is determined. A minimum resolution line width is calculated using signal of light source, process integration parameter and numerical aperture of the source. Based on the line width, a minimum line width is recovered on a mask. The line patterns with line width smaller than calculated width, are used for connecting multiple hole patterns (1) on the mask.