High voltage discrete components manufacture in silicon-on-insulator wafer, involves forming conductive plate simultaneously with lateral wall on protective layer of semiconductor substrate

摘要

A conductive plate is formed simultaneously with the lateral wall on a protective layer (6) of a semiconductor substrate (1). The conductive wall which is in contact with the peripheral region (8) is extended towards the well (5) above the limit between the peripheral region and the substrate. An Independent claim is also included for a discrete high voltage component.