首页> 外国专利> Electronic component production involves transferring a first substrate comprising a pattern onto a second substrate and producing an additional structure using volumes of the materials of the pattern as alignment markers

Electronic component production involves transferring a first substrate comprising a pattern onto a second substrate and producing an additional structure using volumes of the materials of the pattern as alignment markers

机译:电子元件的生产涉及将包含图案的第一基板转移到第二基板上,并使用该图案的材料体积作为对齐标记来生产其他结构

摘要

Fabrication of an integrated electronic component comprises: producing an initial structure (SI) incorporating volumes of respective materials forming a definite pattern (M) on a first substrate; transferring the pattern to a second substrate (200); and producing, on the second substrate surface, an additional structure by using the volumes of the materials of the pattern as alignment markers. Fabrication of an integrated electronic component comprises: (a) producing, on the surface of a first substrate (100), an initial structure (SI) incorporating volumes of respective materials, at least part of the volumes forming a definite pattern (M); (b) transferring at least a part of the initial structure (SI) comprising the pattern of the first substrate (100) to a second substrate (200); and (c) producing, on the surface of the second substrate (200), an additional structure by using at least some of the volumes of the materials of the pattern (M) as alignment markers. Independent claims are given for: (i) an integrated electronic component obtained by the invented process; and (ii) an electronic device comprising a transistor, or a diode, or a dynamic random access memory (DRAM) element.
机译:集成电子元件的制造包括:产生初始结构(SI),所述初始结构结合了在第一基板上形成确定图案(M)的各种材料的体积;将图案转移到第二基板(200);通过使用图案的材料的体积作为对准标记,在第二基板表面上产生附加结构。集成电子部件的制造包括:(a)在第一基板(100)的表面上产生结合了相应材料体积的初始结构(SI),该体积的至少一部分形成确定的图案(M); (b)将包括第一基板(100)的图案的初始结构(SI)的至少一部分转移到第二基板(200); (c)通过使用图案(M)的材料的至少一些体积作为对准标记,在第二基板(200)的表面上产生附加结构。具有以下独立权利要求:(i)通过本发明方法获得的集成电子组件; (ii)一种电子设备,其包括晶体管,二极管或动态随机存取存储器(DRAM)元件。

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