首页> 外国专利> MANUFACTURE OF DUAL DAMASCENE WIRING OF FINE ELECTRONIC ELEMENT USING INORGANIC FILLER WHICH DOES NOT CONTAIN HYBRID TYPE LOW DIELECTRIC CONSTANT SUBSTANCE AND CARBON

MANUFACTURE OF DUAL DAMASCENE WIRING OF FINE ELECTRONIC ELEMENT USING INORGANIC FILLER WHICH DOES NOT CONTAIN HYBRID TYPE LOW DIELECTRIC CONSTANT SUBSTANCE AND CARBON

机译:使用不包含混合型低介电常数物质和碳的无机填充剂制造精细电子元件的双金属引线

摘要

PROBLEM TO BE SOLVED: To provide a manufacture of dual damascene wiring of a fine electronic element using an inorganic filler which does not contain hybrid type low dielectric constant substance and carbon.;SOLUTION: In a manufacture of the dual damascene wiring, an insulating film where a dual damascene region is formed is a hybrid type insulating film of 3.3 or less of a dielectric constant, and a via filler is made of an inorganic matter containing no carbon. Thus, the electrical characteristics are enhanced and a defect is prevented.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种使用不含填料的低介电常数物质和碳的无机填充剂来制造精细电子元件的双大马士革布线的方法;解决方案:制造双大马士革布线时,需要使用绝缘膜形成双大马士革区域的是介电常数为3.3以下的混合型绝缘膜,通孔填充剂由不含碳的无机物构成。因此,可以改善电气特性并防止出现缺陷。;版权所有:(C)2004,日本特许厅

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