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DIFFERENTIAL CURRENT EVALUATION CIRCUIT FOR EVALUATING MEMORY STATE OF SRAM SEMICONDUCTOR MEMORY CELL, AND SENSE AMPLIFIER CIRCUIT
DIFFERENTIAL CURRENT EVALUATION CIRCUIT FOR EVALUATING MEMORY STATE OF SRAM SEMICONDUCTOR MEMORY CELL, AND SENSE AMPLIFIER CIRCUIT
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机译:用于评估SRAM半导体存储单元和传感放大器电路的存储状态的差分电流评估电路
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摘要
PROBLEM TO BE SOLVED: To improve circuit structure for reading and evaluating the memory state in a semiconductor memory cell.;SOLUTION: A differential current evaluation circuit (SBS) is provided with input section resistance adjusting means (MIN, MINB) of a differential amplifier (DV) and a current evaluation circuit (SBS). These means (MIN, MINB) are connected to the output parts (outp, outn) and the input parts (inn, inp) of the differential amplifier (DV) and signal lines (BL, BLB), which are electrically connected also to the input parts (inn, inp) of the differential amplifier (DV). A sense amplifier circuit (LV) is provided with a circuit part (ST2). The differential current evaluation circuit (SBS) and the sense amplifier circuit (LV) are arranged in circuit structure for reading and evaluating the memory state of a semiconductor memory cell. A current evaluation circuit is activated, before a reading process and automatically inactivated, immediately after finishing the reading process by a circuit (STAD) for automatic inactivation.;COPYRIGHT: (C)2004,JPO
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