The plasma CVD device and in the plasma CVD device where the accumulation membrane

摘要

PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus capable of efficiently forming semiconductor devices by forming high-quality deposited films having an extremely uniform film thickness and homogeneous film quality with respect to all directions of the axial direction and circumferential direction of plural cylindrical substrates on the surfaces of these cylindrical substrates at a high speed and a method for forming the deposited films by plasma CVD. ;SOLUTION: This plasma CVD apparatus has a reaction vessel 100 which is reducible in its pressure, a gaseous raw material supplying means 108 which supplies the gaseous raw materials of the plasma CVD into this reaction vessel, a substrate holding means 105A which is disposed in the reaction vessel, a cathode electrode 103 and a high-frequency power source 111. This method for forming the deposited films by the plasma CVD forms the deposited films on the substrates by supplying the high-frequency electric power generated by the high-frequency power source to the cathode electrode and generating the plasma between the substrates held by the substrate holding means and the cathode electrode. The cathode electrode is constituted by capacity coupling the plural bar-shaped conductor members existing on the same axis by a dielectric member 102.;COPYRIGHT: (C)1998,JPO