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exposure method of position detection method using the same, semiconductor device using the exposure method, the method of manufacturing a thin film magnetic head, and the position detecting device, an exposure device including the liquid crystal display devices or
exposure method of position detection method using the same, semiconductor device using the exposure method, the method of manufacturing a thin film magnetic head, and the position detecting device, an exposure device including the liquid crystal display devices or
PROBLEM TO BE SOLVED: To enable the position of a mark to be detected independent of the surface condition of a substrate by a method wherein the position of the mark is separately obtained corresponding to each spatial frequency component basing on photoelectric signals, and the obtained position of the mark is multiplied by a weight attendant on an amplitude change corresponding to an intensity change in a diffracted light ray of each degree and averaged. SOLUTION: A first position data ΔX1 which specifies the position of a lattice pattern MG is calculated by a detection circuit 56 basing on a relation between a level change in a first photoelectric signal and a position (or temporal reference) which serves as a relative scan reference. A second position data ΔX2 which specifies the position of the lattice pattern MG is calculated basing on a relation between a level change in a second photoelectric signal and a position (or temporal reference) which serves as a relative scan reference. The first position data ΔX1 and the second position data ΔX2 are weightedly averaged by a weighted average calculating means 60 using a first weight coefficient C1 and a second weight coefficient C2 X, and the most probable position ΔX of the lattice pattern MG is determined.
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