Formation manner of the hetero epitaxial semiconductor substrate, chemical compound semiconductor equipment, and its production manner null which possess this hetero epitaxial semiconductor

摘要

PROBLEM TO BE SOLVED: To manufacture heteroepitaxial substrate making firm sheet resistance and a compound semiconductor device formed on this substrate by raising the set up temperature on said substrate per respective depositions when the first, second and third III-V group semiconductor layers are successively deposited. ;SOLUTION: Within this heteroepitaxial substrate, the first AlGaAs layer 22a, the second AlGaAs layer 22b and a GaAs layer 22c are deposited respectively at 300-400°C on an Si substrate 22 prebaked in hydrogen, at 500-600°C on the first AlGaAs layer 22a and at 650-750°C on the second AlGaAs layer 22b. In such a composition, by the application of the substrate in low oxygen induction laminated layer density i.e., having excellent crystallinity, the diffusion of V group element having the crystallkine defect on the Si substrate 22 can be suppressed thereby enabling the sheet resistance lessening to be avoided.;COPYRIGHT: (C)1997,JPO