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Photoresist polymer for top-surface imaging process by silylation and photoresist composition containing the same
Photoresist polymer for top-surface imaging process by silylation and photoresist composition containing the same
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机译:用于通过甲硅烷基化进行顶表面成像的光致抗蚀剂聚合物和包含该聚合物的光致抗蚀剂组合物
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摘要
A photoresist polymer for a top-surface imaging process by silylation (TIPS), and a photoresist composition comprising the same. The protecting group of the present photoresist polymer is selectively protected in an exposed region, and thus a hydroxyl group is generated. The hydroxyl group reacts with the silylation agent to cause a silylation process. Accordingly, when the photoresist film is dry-developed, the exposed region only remains to form a negative pattern. In addition, the present photoresist composition has excellent adhesiveness to a substrate, thus preventing a pattern collapse in forming a minute pattern. As a result, the present photoresist composition is suitable for a lithography process using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm). 展开▼