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In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications
In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications
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机译:用于半导体集成电路的化学气相沉积技术中的原位等离子体预沉积晶片处理
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摘要
A method of deoxidizing a surface onto which a refractory metal or molecule which contains a refractory metal atom will be adhered utilizes a plasma which includes a gas such as argon, nitrogen, helium or hydrogen, or a mixture of any of the foregoing to remove oxygen molecules from the surface to which adherence of the refractory metal. Radicals in the plasma coat the surface to prevent further oxidation thereof. The method also includes techniques for depositing refractory metals onto a surface such as a substrate or layer of semiconductor material on which integrated circuitry has been fabricated.
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