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Method of minimizing thermal stress in reversible wafer bonding technique of compound semiconductor wafer

机译:在化合物半导体晶片的可逆晶片键合技术中使热应力最小化的方法

摘要

PURPOSE: A method for minimizing thermal stress in a reversible wafer bonding technique of a compound semiconductor is provided to prevent the damage of the compound wafer due to the thermal stress generated from a bonding process by detecting an optimum condition. CONSTITUTION: A plurality of optimum process temperature values are obtained by inputting each size and each material property of the first and the second wafer(3,1) and a bonding material(2) into a thermal stress formula. The first wafer(3) is heated under the optimum temperature. The bonding material(2) is coated on the second wafer(1). The second wafer(1) is aligned on the first wafer(3). The second wafer(1) is bonded on the first wafer(3) by heating the second wafer(1) under the optimum temperature during a constant period of time.
机译:目的:提供一种在化合物半导体的可逆晶片键合技术中使热应力最小化的方法,以通过检测最佳条件来防止由于键合工艺产生的热应力而导致化合物晶片的损坏。组成:通过将第一和第二晶片(3,1)和键合材料(2)的每个尺寸和每个材料属性输入热应力公式,可以获得多个最佳工艺温度值。在最佳温度下加热第一晶片(3)。接合材料(2)被涂覆在第二晶片(1)上。第二晶片(1)在第一晶片(3)上对准。通过在恒定的时间段内在最佳温度下加热第二晶片(1),将第二晶片(1)粘结在第一晶片(3)上。

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