SEMICONDUCTOR LASER DEVICE HAVING TWO-DIMENSIONAL PHOTONIC BAND GAP STRUCTURE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor laser device having a two-dimensional photonic band gap structure and a fabricating method thereof are provided to reduce largely the optical loss by using a two-dimensional photonic band gap effect. CONSTITUTION: A semiconductor laser device having a two-dimensional photonic band gap structure includes a substrate, a lower clad layer, an active layer, an upper clad layer, and a capping layer. The lower clad layer(2), the active layer(3), the upper clad layer(4), and a capping layer(5) are sequentially laminated on the substrate(1). The semiconductor laser diode includes a two-dimensional photonic band gap region(20). The two-dimensional photonic band gap region is formed by arranging periodically two kinds of materials having different dielectric constants.