PURPOSE: A method for fabricating a titanium nitride layer is provided to enable a mass production by forming a titanium nitride layer while using only one LPCVD(low pressure chemical vapor deposition) thermal chamber, and to improve a barrier characteristic by forming the titanium nitride layer by a two-step process. CONSTITUTION: A titanium layer(6) is formed on a semiconductor substrate(1). The first titanium nitride layer(7) of a thickness from 50 angstroms to 100 angstroms is formed on the titanium layer by using either one of a TDMAT(tetrakis di-methyl amino titanium) source or a TDEAT(tetrakis di-ethyl amino titanium) source. The second titanium nitride layer(8) is formed on the first titanium nitride layer by using either one of TiCl4/N2 or TiCl4/NH3.
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机译：用途：提供一种制造氮化钛层的方法，以通过仅使用一个LPCVD（低压化学气相沉积）热室而形成氮化钛层来实现批量生产，并通过形成氮化钛层来改善阻挡特性通过两步过程。组成：在半导体衬底（1）上形成钛层（6）。通过使用TDMAT（四甲基二甲基氨基钛）源或TDEAT（四乙基二乙基氨基钛）源之一在钛层上形成厚度为50埃至100埃的第一氮化钛层（7）。资源。通过使用TiCl 4 / N 2或TiCl 4 / NH 3中的任一个在第一氮化钛层上形成第二氮化钛层（8）。
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